Type Designator: RFP12N10L
Marking Code: F12N10L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ? - Maximum Power Dissipation: 60 W
|Vds|? - Maximum Drain-Source Voltage: 100 V
|Vgs|? - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|? - Maximum Gate-Threshold Voltage: 2 V
|Id| ? - Maximum Drain Current: 12 A
Tj ? - Maximum Junction Temperature: 150 °C
tr ? - Rise Time: 70 nS
Coss? - Output Capacitance: 325(max) pF
Rds ? - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO220AB
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